This high−density, integrated power module combines

high−performance IGBTs with 1200 V SiC diode.

Features

• Extremely Efficient Trench with Field Stop Technology

• Low Switching Loss Reduces System Power Dissipation

• Module Design Offers High Power Density

• Low Inductive Layout

• 3−channel in Q2BOOST Package

• These are Pb−Free Devices

Typical Applications

• Solar Inverter

• Uninterruptible Power Supplies

NXH300B100H4Q2F2SG属于分立半导体产品 > 晶体管 - IGBT - 模块。安森美半导体公司制造生产的NXH300B100H4Q2F2SG晶体管 - IGBT - 模块绝缘栅双极晶体管 (IGBT) 是三端功率半导体器件，主要用作电子开关，兼具高效率和快速切换优点。作为模块，IGBT 配置为非对称式桥； 升压、降压和制动斩波器；全桥、三电平和三相逆变器。有些器件内置了用于监控温度的 NTC 热敏电阻。IGBT 模块可根据最大功率、集电极电流、集射击穿电压和配置进行区分。