丝印：LC；Package：SOT363；30 V, 200 mA dual P-channel Trench MOSFET

1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  Low threshold voltage  Trench MOSFET technolog

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NEXPERIA

安世

30 V, 200 mA dual P-channel Trench MOSFET

文件：905.48 Kbytes 页数：17 Pages

恩XP

30 V, 200 mA dual P-channel Trench MOSFET

文件：905.48 Kbytes 页数：17 Pages

PHI

飞利浦

30 V, 200 mA dual P-channel Trench MOSFET

Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Very fast switching\n• Low threshold voltage\n• Trench MOSFET technology\n• ESD protection up to 2 kV\n• AEC-Q101 qualified;

Nexperia

安世

30 V, 200 mA dual P-channel Trench MOSFET

恩XP