256K x 36 and 512K x 18 9Mb, FLOW THROUGH NO WAIT STATE BUS SRAM

FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single Read/Write control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control using MO

文件：933.08 Kbytes 页数：36 Pages

ISSI

矽成半导体

256K x 36 and 512K x 18 9Mb, PIPELINE NO WAIT STATE BUS SRAM

FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control usi

文件：997.36 Kbytes 页数：37 Pages

ISSI

矽成半导体