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NTR4003NT3G

SmallSignalMOSFET30V,0.56A,SingleN?묬hannel,SOT??3

SmallSignalMOSFET 30V,0.56A,SingleN−Channel,SOT−23 Features •LowGateVoltageThreshold(VGS(TH))toFacilitateDriveCircuitDesign •LowGateChargeforFastSwitching •ESDProtectedGate •SOT−23PackageProvidesExcellentThermalPerformance •MinimumBreakdownVoltageRatin

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTR4003NT3G

SmallSignalMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTR4003NT3G

SmallSignalMOSFET30V,0.56A,SingleN?묬hannel,SOT??3

SmallSignalMOSFET 30V,0.56A,SingleN−Channel,SOT−23 Features •LowGateVoltageThreshold(VGS(TH))toFacilitateDriveCircuitDesign •LowGateChargeforFastSwitching •ESDProtectedGate •SOT−23PackageProvidesExcellentThermalPerformance •MinimumBreakdownVoltageRatin

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NVR4003NT3G

N-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

NVR4003NT3G

SmallSignalMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NVR4003NT3G

SmallSignalMOSFET30V,0.56A,SingleN?묬hannel,SOT??3

SmallSignalMOSFET 30V,0.56A,SingleN−Channel,SOT−23 Features •LowGateVoltageThreshold(VGS(TH))toFacilitateDriveCircuitDesign •LowGateChargeforFastSwitching •ESDProtectedGate •SOT−23PackageProvidesExcellentThermalPerformance •MinimumBreakdownVoltageRatin

ONSEMION Semiconductor

安森美半导体安森美半导体公司

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