Small Signal MOSFET 30 V, 0.56 A, Single N?묬hannel, SOT??3

Small Signal MOSFET 30 V, 0.56 A, Single N−Channel, SOT−23 Features • Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive Circuit Design • Low Gate Charge for Fast Switching • ESD Protected Gate • SOT−23 Package Provides Excellent Thermal Performance • Minimum Breakdown Voltage Ratin

文件：67.39 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Small Signal MOSFET 30 V, 0.56 A, Single N?묬hannel, SOT??3

Small Signal MOSFET 30 V, 0.56 A, Single N−Channel, SOT−23 Features • Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive Circuit Design • Low Gate Charge for Fast Switching • ESD Protected Gate • SOT−23 Package Provides Excellent Thermal Performance • Minimum Breakdown Voltage Ratin

文件：105.87 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Small Signal MOSFET

文件：90.54 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：485.92 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Small Signal MOSFET

文件：90.54 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Small Signal MOSFET 30 V, 0.56 A, Single N?묬hannel, SOT??3

Small Signal MOSFET 30 V, 0.56 A, Single N−Channel, SOT−23 Features • Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive Circuit Design • Low Gate Charge for Fast Switching • ESD Protected Gate • SOT−23 Package Provides Excellent Thermal Performance • Minimum Breakdown Voltage Ratin

文件：105.87 Kbytes 页数：5 Pages

ONSEMI

安森美半导体