MOSFET - Power, Single N-Channel 80 V, 8.8 m, 59 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS6H848NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：188.04 Kbytes 页数：7 Pages

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安森美半导体

丝印：6H848L；Package：DFN5；MOSFET - Power, Single N-Channel 80 V, 8.8 m, 59 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS6H848NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：188.04 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：848LWF；Package：DFN5；MOSFET - Power, Single N-Channel 80 V, 8.8 m, 59 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS6H848NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：188.04 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET 80 V, 59 A, 8.8 mΩ, Single N-Channel, SO8-FL.

ONSEMI

安森美半导体