丝印：610LWF；Package：DFN5；Power MOSFET 60 V, 10 m, 48 A, Single N?묬hannel

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

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ONSEMI

安森美半导体

Power MOSFET 60 V, 10 m\u0002Ω, 48 A, Single N−Channel

Power MOSFET 60 V, 10 mΩ\u0002, 48 A, Single N−Channel NVMFS5H610NLWF − Wettable Flank Option for Enhanced Optical Inspection • Small Footprint (5x6 mm)\n• For Compact Design\n• Low RDS(on)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• AEC−Q101 Qualified and PPAP Capable\n• These Devices are Pb−Free and are RoHS Compliant;

ONSEMI

安森美半导体

QFP208

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QFP128

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QFN

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上传：深圳庞田科技有限公司