MOSFET - Power, Single N-Channel 40 V, 0.8 m, 353 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C406NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：184.89 Kbytes 页数：7 Pages

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安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 0.7 m, 362 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C406NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：202.3 Kbytes 页数：7 Pages

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安森美半导体

丝印：5C406L；Package：DFN5；MOSFET ??Power, Single N-Channel 40 V, 0.7 m, 362 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C406NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：202.3 Kbytes 页数：7 Pages

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安森美半导体

丝印：406LWF；Package：DFN5；MOSFET ??Power, Single N-Channel 40 V, 0.7 m, 362 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C406NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：202.3 Kbytes 页数：7 Pages

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安森美半导体

丝印：5C406N；Package：DFN5；MOSFET - Power, Single N-Channel 40 V, 0.8 m, 353 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C406NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：184.89 Kbytes 页数：7 Pages

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安森美半导体

丝印：406NWF；Package：DFN5；MOSFET - Power, Single N-Channel 40 V, 0.8 m, 353 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C406NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：184.89 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

单 N 沟道，功率 MOSFET，40V，353A，0.8mΩ

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安森美半导体

Single N-Channel Power MOSFET 40V, 362A, 0.7mΩ

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Small Footprint (5x6 mm)\n• Low RDS(on)\n• Low QG and Capacitance\n• NVMFS5C404NLWF − Wettable Flank Option\n• AEC−Q101 Qualified and PPAP Capable\n• RoHS Compliant;

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安森美半导体