MOSFET ??Power, Dual N-Channel 60 V, 11.9 m, 40 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C672NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：231.22 Kbytes 页数：7 Pages

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安森美半导体

丝印：5C672L；Package：DFN8；MOSFET ??Power, Dual N-Channel 60 V, 11.9 m, 40 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C672NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：231.22 Kbytes 页数：7 Pages

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安森美半导体

丝印：672LWF；Package：DFN8；MOSFET ??Power, Dual N-Channel 60 V, 11.9 m, 40 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C672NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：231.22 Kbytes 页数：7 Pages

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安森美半导体

双 N 沟道，功率 MOSFET，60V，49A，11.9mΩ

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Small Footprint (5x6 mm) for Compact Design\n• Low rDS(on) to Minimize Conduction Loss\n• Low QG and Capacitance to Minimize Driver Losses\n• NVMFD5C672NLWF − Wettable Flank Option for Enhanced Optical Inspection\n• AEC−Q101 Qualified and PPAP Capable\n• RoHS Compliant;

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安森美半导体