双 P 沟道，功率 MOSFET，-30V，-3.05A，85mΩ

Automotive Power MOSFET. -30V -3.05A 85 mΩ Dual P-Channel, SO-8.AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • High Efficiency Components in a Dual SOIC-8 Package\n• Miniature SOIC-8 Surface Mount Package -- Saves Board Space\n• IDSS Specified at Elevated Temperature\n• Mounting Information for the SO-8 Package is Provided\n• RoHS Compliant;

ONSEMI

安森美半导体

Power MOSFET Dual P-Channel SOIC-8

文件：116.48 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 阵列 描述：MOSFET 2P-CH 30V 2.34A 8SOIC

ONSEMI

安森美半导体

Nch 100V 35A Power MOSFET

Features 1) Low on - resistance 2) High Power Package(TO-252) 3) Pb-free plating ; RoHS compliant 4) Halogen free Application Switching

文件：2.78189 Mbytes 页数：13 Pages

ROHM

罗姆

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current ID= 35A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 23mΩ(Max) ·100 Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current , high speed sw

文件：366.57 Kbytes 页数：2 Pages

ISC

无锡固电