Silicon Carbide (SiC) MOSFET – EliteSiC, 192mohm, 1700V, M1, TO-247-4L

Features • Typ. RDS(on) = 192 m @ VGS = 20 V • Ultra Low Gate Charge (QG(tot) = 31 nC) • High Speed Switching with Low Capacitance (Coss = 33 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Automotive On Board Charger • Automotive

文件：263.76 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 192 mohm, 1700 V, M1, TO-247-4L

with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 20V gate drive but also works well with 18V gate drive. • 18V to 20V Gate Drive\n• New 1700V M1 technology: 192mohm RDS(ON) with low EON and EOFF losses\n• 100% Avalanche Tested;

ONSEMI

安森美半导体

SSDC33

ON/安森美

上传：深圳市瑞卓芯科技有限公司

SSDC33

ON/安森美

上传：深圳市瑞卓芯科技有限公司

TO-247

ON

上传：深圳权泰科技有限公司