Silicon Carbide (SiC) MOSFET – EliteSiC, 53mohm, 1700V, M1, TO-247-4L

Features • Typ. RDS(on) = 53 m @ VGS = 20 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • High Speed Switching with Low Capacitance (Coss = 98 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Automotive On Board Charger • Automotive

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安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 53 mohm, 1700 V, M1, TO-247-4L

with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 20V gate drive but also works well with 18V gate drive. • 18V to 20V Gate Drive\n• New 1700V M1 technology: 53mohm RDS(ON) with low EON and EOFF losses\n• 100% Avalanche Tested;

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安森美半导体

SSDC33

ON/安森美

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SSDC33

ON/安森美

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TO-247

ON

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