Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L

Features • Typical RDS(on) = 32 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 55 nC) • High Speed Switching with Low Capacitance (Coss = 114 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free

文件：455.85 Kbytes 页数：9 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L

EliteSiC 650V M3S MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency • New M3S technology: 32 mohm RDS(ON) with low Eon and Eoff losses\n• Qualified for Automotive According to AEC−Q101\n• 15V to 18V Gate Drive\n• TO-247-4L Package with Kelvin source configuration\n• Devices are Pb−Free and are RoHS Compliant;

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安森美半导体

Silicon Carbide (SiC) MOSFET - EliteSiC, 32mohm, 650 V, M3S, TO247-4L

Features • Typical RDS(ON) = 32 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 55 nC) • High Speed Switching with Low Capacitance (Coss = 114 pF) • 100% Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection)

文件：353.32 Kbytes 页数：9 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET - EliteSiC, 32mohm, 650 V, M3S, TO247-4L

Features • Typical RDS(ON) = 32 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 55 nC) • High Speed Switching with Low Capacitance (Coss = 114 pF) • 100% Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection)

文件：189.55 Kbytes 页数：7 Pages

ONSEMI

安森美半导体