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首页>NVH4L020N120SC1>芯片详情
NVH4L020N120SC1_ONSEMI/安森美半导体_Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-4L跃创芯
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产品属性
- 类型
描述
- 型号
:NVH4L020N120SC1
- Pb-free
:Pb
- AEC Qualified
:A
- Halide free
:H
- PPAP Capablee
:P
- Status
:Active
- Channel Polarity
:N-Channel
- Configuration
:Single
- V(BR)DSS Min (V)
:1200
- VGS Max (V)
:+25/-5
- VGS(th) Max (V)
:4.3
- ID Max (A)
:102
- PD Max (W)
:510
- Ciss Typ (pF)
:2943
- Package Type
:TO-247-4
供应商
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