Silicon Carbide (SiC) Schottky Diode - EliteSiC, 50A, 1200V, D3, TO-247-2L

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next gen • Max Junction Temperature\n• Tj = 175 °C\n• Avalanche Rated\n• 380 mJ\n• High Surge Current Capacity\n• Positive Temperature Coefficient\n• Ease of Paralleling\n• No Reverse Recovery / No Forward Recovery\n• AEC-Q101 qualified and PPAP Capable;

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安森美半导体

Silicon Carbide Schottky Diode

FEATURES · High surge current capability · Positive Temperature Coefficient · Easy to paralleling · No reverse recovery APPLICATIONS · Solar inverter · Power factor correction · Switch mode power supply

文件：402.89 Kbytes 页数：3 Pages

ISC

无锡固电

Package：TO-247-2；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SIC DIODE GEN2.0 1200V TO247-2L

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安森美半导体

50A, 1200V Hyperfast Diode

50A, 1200V Hyperfast Diode The RHRG50120 is a hyperfast diode with soft recovery characteristics (trr

文件：14.51 Kbytes 页数：2 Pages

Intersil

50A, 1200V Hyperfast Diode

50A, 1200V Hyperfast Diode The RHRU50120 (TA49100) are hyperfast diodes with soft recovery characteristics (tRR

文件：59.58 Kbytes 页数：4 Pages

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50A, 1200V Ultrafast Diode

50A, 1200V Ultrafast Diode The RURG50120 is an ultrafast diode with soft recovery characteristics (trr

文件：49.2 Kbytes 页数：4 Pages

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