isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 155A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：260.339 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：92.27 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

文件：1.09101 Mbytes 页数：4 Pages

Bychip

百域芯

Power MOSFET

文件：92.27 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

单 N 沟道，功率 MOSFET，60V，155A，2.5mΩ

Automotive Power MOSFET in a DPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Low on-resistance\n• Minimal conduction losses\n• High current capability\n• Robust load performance\n• AEC−Q101 Qualified and PPAP Capable\n• RoHS Compliant;

ONSEMI

安森美半导体