MOSFET ??Power, Single N-Channel 40 V, 4.2 m, 83 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：233.33 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 82A@ TC=25℃ ·Drain Source Voltage -VDSS= 40 V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：259.56 Kbytes 页数：2 Pages

ISC

无锡固电

MOSFET ??Power, Single, N-Channel, 40 V, 3.9 m, 88 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：234.53 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 84A@ TC=25℃ ·Drain Source Voltage -VDSS= 40 V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.9mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：260.56 Kbytes 页数：2 Pages

ISC

无锡固电

MOSFET ??Power, Single, N-Channel, 40 V, 3.9 m, 88 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：234.53 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

文件：930.42 Kbytes 页数：4 Pages

BYCHIP

百域芯

丝印：5C454NG；Package：DPAK；MOSFET ??Power, Single N-Channel 40 V, 4.2 m, 83 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：233.33 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

单 N 沟道，功率 MOSFET，40V，83A，4.2mΩ

Automotive Power MOSFET in a DPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Low on-resistance\n• Minimal conduction losses\n• High current capability\n• Robust load performance\n• 100% avalanche energy tested\n• Voltage overstress safeguard\n• RoHS Compliant;

ONSEMI

安森美半导体

单 N 沟道，功率 MOSFET，40V，88A，3.9mΩ

Automotive Power MOSFET in a DPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Low on-resistance\n• High current capability\n• 100% avalanche energy tested\n• AEC−Q101 Qualified and PPAP Capable\n• RoHS Compliant;

ONSEMI

安森美半导体