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首页>NVD5890NLT4G>芯片详情
NVD5890NLT4G_ONSEMI/安森美半导体_MOSFET 40V T2 DPAK USR GRESHAM F万三科技
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产品属性
- 类型描述 
- 型号:NVD5890NLT4G 
- 功能描述:MOSFET 40V T2 DPAK USR GRESHAM F 
- RoHS:否 
- 制造商:STMicroelectronics 
- 晶体管极性:N-Channel 
- 汲极/源极击穿电压:650 V 
- 闸/源击穿电压:25 V 
- 漏极连续电流:130 A 电阻汲极/源极 
- RDS(导通):0.014 Ohms 
- 配置:Single 
- 安装风格:Through Hole 
- 封装/箱体:Max247 
- 封装:Tube 
供应商
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