丝印：NVBLS1D1N08H；Package：M0-299A；MOSFET - Power, Single N-Channel, TOLL 80 V, 1.05 m, 351 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • Lowers Switching Noise/EMI • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Tools, Battery Operated Vacuums • UAV

文件：424.88 Kbytes 页数：7 Pages

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MOSFET - Power, Single N-Channel, TOLL 80 V, 1.05 mΩ, 351 A

Automotive Power MOSFET in a 10x12mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option included for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Low RDS(on)\n• to Minimize Conduction Losses\n• Low QG and Capacitance\n• to Minimize Driver Losses\n• AEC−Q101 Qualified and PPAP Capable\n• Automotive Qualified\n• Soft dynamictransitions\n• Minimize Switching Noise/EMI\n• These Devices are Pb−Free and are RoHS Compliant;

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, TOLL 80 V, 1.05 m, 351 A

文件：423.38 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, TOLL

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Synchronous Rectification (SR) in DC−DC and AC−DC • Primary

文件：319.33 Kbytes 页数：7 Pages

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安森美半导体