NV6123中文资料650 V GaNFast™ Power IC数据手册Navitas规格书

描述 Description

The NV6123 is a thermally-enhanced version of the popular NV6113 650 V GaNFast™ power IC, optimized for high-frequency and soft-switching topologies.

Monolithic integration of FET, drive and logic creates an easy-to-use ‘digital in, power out’ high performance powertrain building block, enabling designers to create the fastest, smallest, most efficient integrated powertrain in the world.

The highest dV/dt immunity, high-speed integrated drive and industry standard low-profile, low-inductance, 6 x 8 mm SMT QFN package allow designers to exploit Navitas GaN technology with simple, quick, dependable solutions for breakthrough power density and efficiency.

Navitas’ GaNFast™ power ICs extend the capabilities of traditional topologies such as flyback, half-bridge, resonant, etc. to MHz+ and enable the commercial introduction of breakthrough designs.

特性 Features

GaNFast™ Power IC
• Thermally-enhanced version of NV6113
• Large cooling pad
• Enhanced thermals when using CS resistor
• Monolithically-integrated gate drive
• Wide VCC range (10 to 30 V)
• Programmable turn-on dV/dt
• 200 V/ns dV/dt immunity
• 650 V eMode GaN FET
• Low 300 mΩ resistance
• Zero reverse-recovery charge
• 2 MHz operation

Small, low-profile SMT QFN
• 6 x 8 mm footprint, 0.85 mm profile
• Minimized package inductance

Environmental
• RoHS, Pb-free, REACH-compliant

应用 Application

• Consumer/Industrial