NV6113中文资料650 V GaNFast™ Power IC数据手册Navitas规格书

描述 Description

This 650 V GaNFast power IC is optimized for high frequency, soft-switching topologies. Monolithic integration of FET, drive and logic creates an easy-to-use ‘digital-in, power-out’ high-performance powertrain building block, enabling designers to create the fastest, smallest, most efficient power converters in the world.

The highest dV/dt immunity, high-speed integrated drive and industry-standard low-profile, low-inductance, 5 x 6 mm SMT QFN package allow designers to exploit Navitas GaN technology with simple, quick, dependable solutions for breakthrough power density and efficiency.GaNFast power ICs extend the capabilities of traditional topologies such as flyback, half-bridge,resonant, etc. to MHz+ and enable the commercial introduction of breakthrough designs.

特性 Features

GaNFast™ Power IC
• Monolithically-integrated gate drive
• Wide logic input range with hysteresis
• 5 V / 15 V input-compatible
• Wide VCC range (10 to 30 V)
• Programmable turn-on dV/dt
• 200 V/ns dV/dt immunity
• 650 V eMode GaN FET
• Low 300 mΩ resistance
• Zero reverse recovery charge
• 2 MHz operation

Small, low-profile SMT QFN
• 5 x 6 mm footprint, 0.85 mm profile
• Minimized package inductance

Environmental
• RoHS, Pb-free, REACH-compliant

应用 Application

• Consumer/Industrial