Description

The NV24M01MUW is a EEPROM Serial 1−Mb I2C − Automotive

Grade 1, internally organized as 131,072 words of 8 bits each.

It features a 256−byte page write buffer and supports the Standard

(100 kHz), Fast (400 kHz) and Fast−Plus (1 MHz) I2C protocol.

Write operations can be inhibited by taking the WP pin High (this

protects the entire memory).

External address pins make it possible to address up to four

NV24M01MUW devices on the same bus.

On−Chip ECC (Error Correction Code) makes the device suitable

for high reliability applications.

Features

• Automotive AEC−Q100 Grade 1 (−40°C to +125°C) Qualified

• 1.8 V to 5.5 V Supply Voltage Range

• 256−Byte Page Write Buffer

• Hardware Write Protection for Entire Memory

• Schmitt Triggers and Noise Suppression Filters on I2C Bus Inputs

(SCL and SDA)

• Low Power CMOS Technology

• 1,000,000 Program/Erase Cycles

• 100 Year Data Retention

• Industrial and Extended Temperature Range

• 8−pad UDFN Wettable Flank Package

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

NV24M01MUW属于集成电路（IC） > 存储器。安森美半导体公司制造生产的NV24M01MUW存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。