Main Switch Power MOSFET and Dual Charging BJT

文件：178.74 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Main Switch Power MOSFET and Dual Charging BJT

文件：178.74 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Power MOSFET 12V 6.2A 110 mOhm Dual P-Channel DFN8 with PNP Low VCE Transistors

This P-Channel Power MOSFET integrates one high performance power MOSFET and two Low Vce(sat) transistors, greatly reducing the layout space and optimizing charging performance in battery-powered portable electronics. • High Performance Power MOSFET + Dual Low Vce(sat) Transistors as Charging Power Mux\n• Independent Pin-out Provides Circuit Flexibility\n• This is a Pb-Free Device;

ONSEMI

安森美半导体

Package：8-WDFN 裸露焊盘；包装：管件 功能：电源管理 类别：集成电路（IC） 电池管理 描述：IC BATT PWR MGMT 8DFN

ONSEMI

安森美半导体