MOSFET ??Power, Single, N-Channel 40 V, 7.3 m, 51 A

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丝印：466L；Package：WDFN8；MOSFET ??Power, Single, N-Channel 40 V, 7.3 m, 51 A

文件：184.69 Kbytes 页数：6 Pages

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安森美半导体

单 N 沟道，功率 MOSFET，40V，51 A，7.3mΩ

Power MOSFET\n40 V, 7.3 mΩ, 51 A, Single N−Channel • Small footprint (3x3 mm)\n• Compact Design\n• Low On-Resistance\n• Minimizes Conduction Losses\n• Low Capacitance\n• Minimize Driver Losses\n• RoHS Compliant;

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MOSFET ??Power, Dual N-Channel 40 V, 8.1 m, 49 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C466NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

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MOSFET ??Power, Dual N-Channel 40 V, 7.4 m, 52 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C466NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

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安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 8.1 m, 49 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C466NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：198.54 Kbytes 页数：7 Pages

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安森美半导体