MOSFET ??Power, Single, N-Channel, 8FL 30 V, 67 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • DC−DC Converters • Power Load Switch • Notebook

文件：206.7 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Power MOSFET

文件：129.93 Kbytes 页数：7 Pages

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安森美半导体

MOSFET ??Power, Single, N-Channel, 8FL 30 V, 67 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • DC−DC Converters • Power Load Switch • Notebook

文件：206.7 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single, N-Channel, 8FL 30 V, 67 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • DC−DC Converters • Power Load Switch • Notebook

文件：206.7 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single, N-Channel, 8FL 30 V, 67 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • DC−DC Converters • Power Load Switch • Notebook

文件：206.7 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Single N-Channel Power MOSFET 30V, 65A, 4.2mΩ

Power MOSFET\n30 V, 67 A, Single N−Channel, µ8FL • Low RDS(on) to Minimize Conduction Losses\n• Improve System Efficiency\n• Low Capacitance to Minimize Driver Losses\n• Improve System Efficiency\n• Optimized Gate Charge to Minimize Switching Losses\n• RoHS Compliant;

ONSEMI

安森美半导体