Very Low Forward Voltage Trench-based Schottky Rectifier

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ONSEMI

安森美半导体

Very Low Forward Voltage Trench-based Schottky Rectifier

文件：110 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

肖特基功率整流器，双，30 A，80 V

The NTSV3080CTG is our new Dual 30A 80V Very Low Forward Voltage Trench-based Dual Schottky Rectifier.This new technology allows lower forward voltage drop without the high reverse leakage tradeoff experienced with planar schottky rectifiers.This platform also provides very stable switching characte • Fine Lithography Trenchbased Schottky Technology for Very Low Forward Voltage and Low Leakage\n• Fast Switching with Exceptional Temperature Stability\n• Low Power Loss and Lower Operating Temperature\n• Higher Efficiency for Achieving Regulatory Compliance\n• Low Thermal Resistance\n• High Surge ;

ONSEMI

安森美半导体

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 57A, RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 14mΩ @VGS = 4.5V Super high dense cell design for extremely low RDS(ON). High power and current handing capability Lead free product is acquired. TO-251 & TO-252 package.

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CET

华瑞

Rectifier diodes schottky barrier

GENERAL DESCRIPTION Dual, low leakage, platinum barrier schottky rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intend

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PHI

PHI

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR30100WT series is supplied in the conventional leaded SOT429 (TO247) package. FEATURES • Low forward volt drop • Fast

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PHI

PHI