Very Low Forward Voltage Trench-based Schottky Rectifier

Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low VF = 0.557 V at IF = 5 A Features • Fine Lithography Trench−based Schottky Technology for Very Low Forward Voltage and Low Leakage • Fast Switching with Exceptional Temperature Stability • Low Power Loss and Lower Oper

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安森美半导体

Very Low Forward Voltage Trench-based Schottky Rectifier

ONSEMI

安森美半导体

Schottky Power Rectifier, Dual, 20 A, 120 V

The NTSV20120CTG is our new Dual 20A 120V Very Low Forward Voltage Trench-based Dual Schottky Rectifier.This new technology allows lower forward voltage drop without the high reverse leakage tradeoff experienced with planar schottky rectifiers.This platform also provides very stable switching charac • Fine Lithography Trench-based Schottky Technology for Very LowForward Voltage and Low Leakage\n• Fast Switching with Exceptional Temperature Stability\n• Low Power Loss and Lower Operating Temperature\n• Higher Efficiency for Achieving Regulatory Compliance\n• Low Thermal Resistance\n• High Surge ;

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安森美半导体

Package：TO-220-3；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 120V TO220

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安森美半导体