P-Channel 30-V(D-S) MOSFET

General Description The UMW NTR4502PT1G uses advanced trench technology DRAIN to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications.

文件：1.61385 Mbytes 页数：9 Pages

UMW

友台半导体

Power MOSFET ??0 V, ??.95 A, Single, P?묬hannel, SOT??3

−30 V, −1.95 A, Single, P−Channel, SOT−23 Features •Leading Planar Technology for Low Gate Charge / Fast Switching •Low RDS(ON)for Low Conduction Losses •SOT−23 Surface Mount for Small Footprint (3 X 3 mm) •Pb−Free Packages are Available Applications •DC to DC Conversi

文件：136.03 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Power MOSFET ??0 V, ??.95 A, Single, P?묬hannel, SOT??3

−30 V, −1.95 A, Single, P−Channel, SOT−23 Features •Leading Planar Technology for Low Gate Charge / Fast Switching •Low RDS(ON)for Low Conduction Losses •SOT−23 Surface Mount for Small Footprint (3 X 3 mm) •Pb−Free Packages are Available Applications •DC to DC Conversi

文件：136.03 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Power MOSFET ??0 V, ??.95 A, Single, P?묬hannel, SOT??3

−30 V, −1.95 A, Single, P−Channel, SOT−23 Features •Leading Planar Technology for Low Gate Charge / Fast Switching •Low RDS(ON)for Low Conduction Losses •SOT−23 Surface Mount for Small Footprint (3 X 3 mm) •Pb−Free Packages are Available Applications •DC to DC Conversi

文件：136.03 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

P-Channel 30-V(D-S) MOSFET

General Description The UMW NTR4502PT1G uses advanced trench technology DRAIN to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications.

文件：1.61385 Mbytes 页数：9 Pages

UMW

友台半导体

Power MOSFET ??0 V, ??.95 A, Single, P?묬hannel, SOT??3

−30 V, −1.95 A, Single, P−Channel, SOT−23 Features •Leading Planar Technology for Low Gate Charge / Fast Switching •Low RDS(ON)for Low Conduction Losses •SOT−23 Surface Mount for Small Footprint (3 X 3 mm) •Pb−Free Packages are Available Applications •DC to DC Conversi

文件：136.03 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Power MOSFET ??0 V, ??.95 A, Single, P?묬hannel, SOT??3

−30 V, −1.95 A, Single, P−Channel, SOT−23 Features •Leading Planar Technology for Low Gate Charge / Fast Switching •Low RDS(ON)for Low Conduction Losses •SOT−23 Surface Mount for Small Footprint (3 X 3 mm) •Pb−Free Packages are Available Applications •DC to DC Conversi

文件：136.03 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：486.22 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Power MOSFET

文件：100.07 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Power MOSFET

文件：183.4 Kbytes 页数：2 Pages

ZPSEMIZP Semiconductor

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