Trench Power MOSFET -20 V, Single P-Channel, SOT-23

Features • Leading −20 V Trench for Low RDS(on) • −1.8 V Rated for Low Voltage Gate Drive • SOT−23 Surface Mount for Small Footprint • Pb−Free Package is Available Applications • Load/Power Management for Portables • Load/Power Management for Computing • Charging Circuits and Battery Prote

文件：56.55 Kbytes 页数：6 Pages

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安森美半导体

MOSFET – Power, Single P-Channel, Trench, SOT-23 -20 V

Features • Leading −20 V Trench for Low RDS(on) • −1.8 V Rated for Low Voltage Gate Drive • SOT−23 Surface Mount for Small Footprint • NTRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices

文件：219.5 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

文件：465.22 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Trench Power MOSFET ??0 V, Single P?묬hannel, SOT??3

文件：125.45 Kbytes 页数：5 Pages

ONSEMI

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Trench Power MOSFET

文件：81.47 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

场效应管

HXY MOSFET

华轩阳电子