NTP190N65S3HF

功率 MOSFET，N 沟道，SUPERFET® III，FRFET®，650 V，20 A，190 mΩ，TO-220; • 700 V @ TJ = 150 °C\n• Higher system reliability at low temperature operation\n• Ultra Low Gate Charge (Typ. Qg = 34 nC)\n• Lower switching loss\n• Low Effective Output Capacitance (Typ. Coss(eff.) = 316 pF)\n• Lower switching loss\n• Excellent body diode performance (low Qrr, robust body diode)\n• Higher system reliability in LLC and Phase shift full bridge circuit\n• Optimized Capacitance\n• Lower peak Vds and lower Vgs oscillation\n• RoHS Compliant\n• 100% Avalanche Tested\n• Typ. RDS(on) = 161 mΩ\n;

SUPERFET III MOSFET is ON Semiconductor’s brand−new high\nvoltage super−junction (SJ) MOSFET family that is utilizing charge\nbalance technology for outstanding low on−resistance and lower gate\ncharge performance. This advanced technology is tailored to minimize\nconduction loss, provide superior switching performance, and\nwithstand extreme dv/dt rate.\nConsequently, SUPERFET III MOSFET is very suitable for the\nvarious power systems for miniaturization and higher efficiency.\nSUPERFET III FRFET MOSFET’s optimized reverse recovery\nperformance of body diode can remove additional component and\nimprove system reliability.

NTP190N65S3HF

丝印：NTP190N65S3HF；Package：TO-220；MOSFET ??Power, N-Channel, SUPERFET III, FRFET

NTPF190N65S3H

MOSFET-Power,N?륝hannel,SUPERFETIII,FAST650V,190m,16A

NTPF190N65S3HF

MOSFET??Power,N-Channel,SUPERFETIII,FRFET650V,20A,190m

NVB190N65S3F

MOSFET-Power650V,190m,20A,SingleN-Channel,D2PAK

Description SUPERFET®IIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper−junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon−resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pr

NVBG190N65S3F

MOSFET-Power,SingleN-Channel,D2PAK-7L650V,190m,20A

Description SUPERFET®IIIMOSFETisonsemi’sbrand−newhighvoltage super−junction(SJ)MOSFETfamilythatisutilizingchargebalance technologyforoutstandinglowon−resistanceandlowergatecharge performance.Thisadvancedtechnologyistailoredtominimize conductionloss,providesupe