NTP082N65S3F数据手册ONSEMI中文资料规格书

描述 Description

SuperFET® III MOSFET is ON Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This advanced technology
is tailored to minimize conduction loss, provide superior switching
performance, and withstand extreme dv/dt rate.
Consequently, SuperFET III MOSFET is very suitable for the
various power system for miniaturization and higher efficiency.
SuperFET III FRFET® MOSFET’s optimized reverse recovery
performance of body diode can remove additional component
and improve system reliability.

特性 Features

• 700 V @ TJ = 150 °C
• Higher system reliability at low temperature operation
• Ultra Low Gate Charge (Typ. Qg = 81 nC)
• Lower switching loss
• Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)
• Lower switching loss
• Optimized Capacitance
• Lower peak Vds and lower Vgs oscillation
• Excellent body diode performance (low Qrr, robust body diode)
• Higher system reliability in LLC and Phase shift full bridge circuit
• Typ. RDS(on) = 70 mΩ
• 100% Avalanche Tested
• RoHS Compliant

应用 Application

• Telecommunication
• Cloud system
• Industrial
• Telecom power
• Server power
• Solar / UPS
• EV charger