MOSFET ??Power, Single, N-Channel 40 V, 2.8 m, 110 A

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丝印：2D9N04CL；Package：LFPAK4；MOSFET ??Power, Single, N-Channel 40 V, 2.8 m, 110 A

文件：341.32 Kbytes 页数：7 Pages

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安森美半导体

功率 MOSFET，40 V，2.8 mΩ，110 A，单 N 沟道

Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.

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MOSFET – Power, Single N-Channel, STD Gate, SO8FL 40 V, 3.1 m, 94 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Ba

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安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 2.8 m, 110 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：340.21 Kbytes 页数：7 Pages

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安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 2.8 m, 110 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：340.21 Kbytes 页数：7 Pages

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安森美半导体