Power MOSFET 40 V, 12 m, 35 A, Single N?묬hannel

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丝印：011N04C；Package：LFPAK4；Power MOSFET 40 V, 12 m, 35 A, Single N?묬hannel

文件：322.88 Kbytes 页数：7 Pages

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安森美半导体

功率 MOSFET，单 N 沟道，40 V，12 mΩ，35 A

Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.

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安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 11 m, 37 A

Features • Small Footprint for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：170.89 Kbytes 页数：7 Pages

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安森美半导体

MOSFET – Power, Single N-Channel 40 V, 12 m, 35 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：341.08 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET – Power, Single N-Channel 40 V, 12 m, 35 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：341.08 Kbytes 页数：7 Pages

ONSEMI

安森美半导体