Single N-Channel Power MOSFET 150V, 174A, 4.45mΩ, PQFN 8x8

This N-Channel PTNG 150V MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance. • Very Low RDS(on), Shielded Gate Trench Technology\n• Minimize conduction losses\n• Low Profile PQFN 8x8 package\n• High peak current and low parasitic inductance\n• Maximum junction temperature of 175C\n• Offers a wider design margin for thermally challenged applications\n• Soft Body diode with lo;

ONSEMI

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丝印：4D3N15MC；Package：DFNW8；MOSFET ??Power, Single N-Channel, DFNW8 150 V, 4.45 m, 174 A

文件：298.49 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, TDFNW8 DUAL COOL 150 V, 4.45 m, 174 A

文件：406.01 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel, DFNW8 150 V, 4.45 m, 165 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：300.08 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel, TDFNW8 DUAL COOL 150 V, 4.45 m, 165 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：337.55 Kbytes 页数：8 Pages

ONSEMI

安森美半导体