Single N-Channel Power MOSFET 150V, 174A, 4.45mΩ

Industrial Power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. \nWettable Flank capable for Enhanced Optical Inspection.\nDual Cool exposed Source pad on top • Small Footprint (8x8 mm)\n• Compact Design\n• Low RDS(on)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• Wettable Flank Option\n• Enhanced Optical Inspection\n• Enhanced Dualcool exposed top Pad design\n• top heatsink capable for improved thermals\n• RoHS Comp;

ONSEMI

安森美半导体

丝印：4D3N15M；Package：TDFNW8；MOSFET - Power, Single N-Channel, TDFNW8 DUAL COOL 150 V, 4.45 m, 174 A

文件：406.01 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel, DFNW8 150 V, 4.45 m, 165 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：300.08 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel, TDFNW8 DUAL COOL 150 V, 4.45 m, 165 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：337.55 Kbytes 页数：8 Pages

ONSEMI

安森美半导体