MOSFET - Power, Single N-Channel 60 V, 0.68 m, 477 A

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丝印：0D7N06CL；Package：DFNW8；MOSFET - Power, Single N-Channel 60 V, 0.68 m, 477 A

文件：401.4 Kbytes 页数：7 Pages

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单 N 沟道，功率 MOSFET，60V，A，0.68mΩ，PQFN 8x8

This N-Channel T6 60V MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. • Very Low RDS(on), Shielded Gate Trench Technology\n• Minimize conduction losses\n• Low Profile PQFN 8x8 package\n• High peak current and low parasitic inductance\n• Maximum junction temperature of 175C\n• Offers a wider design margin for thermally challenged applications\n• RoHS Compliant;

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MOSFET AFSM T6 60V LL NCH

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