Single N-Channel Power MOSFET 80V, 229A, 2.0mΩ, PQFN 8x8

This N-Channel PTNG 80V MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance. • Very Low RDS(on), Shielded Gate Trench Technology\n• Minimize conduction losses\n• Low Profile PQFN 8x8 package\n• High peak current and low parasitic inductance\n• Maximum junction temperature of 175C\n• Offers a wider design margin for thermally challenged applications\n• Soft Body diode with lo;

ONSEMI

安森美半导体

丝印：NTMTS002N08MC；Package：DFNW8；MOSFET - Power, Single N-Channel, DFNW8 80 V, 2 m, 229 A

文件：412.59 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, TOLL 80 V, 2 m, 238 A

文件：395.67 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

SOT883

ON

上传：深圳市兴灿科技有限公司

QFN40

NF/耐福

上传：深圳市勤思达科技有限公司