NTMTS002N08MC

Single N-Channel Power MOSFET 80V, 229A, 2.0mΩ, PQFN 8x8; • Very Low RDS(on), Shielded Gate Trench Technology\n• Minimize conduction losses\n• Low Profile PQFN 8x8 package\n• High peak current and low parasitic inductance\n• Maximum junction temperature of 175C\n• Offers a wider design margin for thermally challenged applications\n• Soft Body diode with low Qrr\n• Reduces switching spike\n• RoHS Compliant\n;

This N-Channel PTNG 80V MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance.

NTMTS002N08MC

丝印：NTMTS002N08MC；Package：DFNW8；MOSFET - Power, Single N-Channel, DFNW8 80 V, 2 m, 229 A

NTBLS002N08MC

MOSFET-Power,SingleN-Channel,TOLL80V,2m,238A