NTMFSC1D9N06HL数据手册ONSEMI中文资料规格书

描述 Description

This N-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

特性 Features

• Advanced Dual−Side Cooled Packaging
• Optimized Switching performance
• Ultra Low RDS(on) to Minimize Conduction Losses
• Ultra Low RDS(on) to Minimize Conduction Losses
• MSL1 Robust Packaging Design
• MSL1 Robust Packaging Design
• Low Qg and Qoss to Minimize Charge Losses
• Low Qg and Qoss to Minimize Charge Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
• High efficiency with lower switching spike and EMI

应用 Application

• Synchronous Rectification for ATX / Server / Telecom PSU
• DC−DC Conversion
• Orring FET/Load Switching/Hot Swap Application
• Motor Drives andUninterruptible Power
• Micro Solar Inverter
• Battery Management and Protection
• Power Supplies
• Motor control
• Solar Inverters