Power MOSFET 30 V, 65 A, Single N?묬hannel, SO?? FL

MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 65 A Features • Integrated Schottky Diode • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free and are RoHS Compliant Applicat

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Power MOSFET 30 V, 65 A, Single N?묬hannel, SO?? FL

MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 65 A Features • Integrated Schottky Diode • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free and are RoHS Compliant Applicat

文件：120.84 Kbytes 页数：7 Pages

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安森美半导体

Power MOSFET 30 V, 65 A, Single N?묬hannel, SO?? FL

MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 65 A Features • Integrated Schottky Diode • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free and are RoHS Compliant Applicat

文件：120.84 Kbytes 页数：7 Pages

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安森美半导体

单 N 沟道功率 MOSFET 30V，65A，3.4mΩ

Power MOSFET 30 V, 65 A, Single N−Channel, SO−8 FL • Integrated Schottky Diode\n• Low rDS(on) to Minimize Conduction Loss\n• Low Capacitance to Minimize Driver Losses\n• Optimized Gate Charge to Minimize Switching Losses\n• RoHS Compliant;

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