Power MOSFET 30 V, 44 A, Single N?묬hannel, SO?? FL

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Single N?묬hannel Power MOSFET

Power MOSFET 30 V, 44 A, Single N−Channel, SO−8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Dual Sided Cooling Capability • Optimized for 5 V, 12 V Gate Drives • These Devices are

文件：112.72 Kbytes 页数：7 Pages

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Single N?묬hannel Power MOSFET

Power MOSFET 30 V, 44 A, Single N−Channel, SO−8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Dual Sided Cooling Capability • Optimized for 5 V, 12 V Gate Drives • These Devices are

文件：112.72 Kbytes 页数：7 Pages

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Single N?묬hannel Power MOSFET

Power MOSFET 30 V, 44 A, Single N−Channel, SO−8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Dual Sided Cooling Capability • Optimized for 5 V, 12 V Gate Drives • These Devices are

文件：112.72 Kbytes 页数：7 Pages

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安森美半导体

Power MOSFET 30 V, 44 A, Single N?묬hannel, SO?? FL

文件：118.88 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET 30 V, 44 A, Single N?묬hannel, SO?? FL

文件：118.88 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

单 N 沟道，功率 MOSFET，30V，44A，7mΩ

Power MOSFET, 30 V, 44 A, Single N Channel, SO8FL • Optimized Qg and Rg\n• Improve Signal Quality and Minimize Switching Losses\n• Low Capacitance\n• Minimize Driver Loss\n• Low RDS(on)\n• Improve Efficiency \n• RoHS Compliant;

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功率 MOSFET，30 V，44A，7mΩ，单 N 沟道，SO-8FL，热增强

NTMFS4926NE • Low ON-resistance\n• Low Capacitance \n• Optimized Gate Charge \n• Dual Sided Cooling Capability\n• Optimized for 5 V, 12 V Gate Drives\n• PbFree, Halogen Free/BFR Free and are RoHS Compliant;

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