N 沟道，屏蔽门极，PowerTrench® MOSFET，80V，166A，2.7mΩ

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. • Shielded Gate MOSFET Technology\n• Max rDS(on) = 2.7 mΩ at VGS = 10 V, ID = 68 A\n• Max rDS(on) = 8 mΩ at VGS = 6 V, ID = 34 A\n• 50% Lower Qrr than Other MOSFET Suppliers\n• Lowers Switching Noise/EMI\n• MSL1 Robust Package Design\n• 100% UIL Tested\n• RoHS Compliant\n;

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安森美半导体

N-Channel Shielded Gate PowerTrench MOSFET

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ONSEMI

安森美半导体

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