NTMFS08N004C

N‐Channel Shielded Gate PowerTrench® MOSFET 80V, 126A, 4.0mΩ; • Shielded Gate MOSFET Technology\n• Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 44 A\n• Max rDS(on) = 12.5 mΩ at VGS = 6 V, ID = 22 A\n• 50% Lower Qrr than Other MOSFET Suppliers\n• Lowers Switching Noise/EMI\n• MSL1 Robust Package Design\n• 100% UIL Tested\n• RoHS Compliant\n;

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

NTMFS08N004C

N-Channel Shielded Gate PowerTrench MOSFET