Power MOSFET, 150V Single N channel 31A, 31m Ohm in Power56 package

This N-Channel MV MOSFET is produced using advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. • Shielded Gate MOSFET Technology\n• Optimized for Low RDS-on and Qg\n• Max rDS(on) = 31mΩ at VGS = 10 V, ID = 13 A\n• Low Conduction Loss\n• Max rDS(on) = 36.5 mΩ at VGS = 8 V, ID = 6 A\n• 50% Lower Qrr than other mosfet suppliers\n• Lowers Switching noise /EMI\n• MSL1 Robust Package Design\n• ;

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MOSFET - N-Channel Shielded Gate PowerTrench 150 V, 31 m, 31 A

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MOSFET - Power, Single N-Channel, Shielded Gate, PowerTrench 150 V, 31 m, 27 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Primary DC−DC MOSFET • Synchronous Rectifie

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