Power MOSFET, 150V Single N channel 35A, 11.5m Ohm in Power56 package

This N-Channel MV MOSFET is produced using advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. • Shielded Gate MOSFET Technology\n• Optimized for Low RDS-on and Qg\n• Max rDS(on) = 11.5 mΩ at VGS = 10 V, ID = 35 A\n• Low Conduction Loss\n• Max rDS(on) = 13.2 mΩ at VGS = 8 V, ID = 18 A\n• 50% Lower Qrr than other mosfet suppliers\n• Lowers Switching noise /EMI\n• MSL1 Robust Package Design;

ONSEMI

安森美半导体

丝印：NTMFS011N15MC；Package：PQFN8；MOSFET - Power, Single N-Channel, PQFN8 5x6 150 V, 11.5 m, 78 A

文件：257.94 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - N-Channel Shielded Gate PowerTrench 150 V, 10.9 m, 74.3 A

文件：145.86 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

N-Channel MOSFET uses advanced SGT technology

文件：1.82199 Mbytes 页数：5 Pages

DOINGTER

杜因特