MOSFET - Power, Single N-Channel, PQFN8 100 V, 10.8 m, 83 A

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丝印：10N10G；Package：PQFN8；MOSFET - Power, Single N-Channel, PQFN8 100 V, 10.8 m, 83 A

文件：267.54 Kbytes 页数：7 Pages

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MOSFET - Power, Single, N-Channel, PQFN8, 100V, 10.8mΩ, 83A

This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode. •Shielded Gate MOSFET Technology\n• Rugged technology for utmost reliability\n• Max rDS(on) = 10.8 mΩ at VGS = 10 V, ID = 83 A\n• Hot Swap tolerant with superior SOA curve than std mosfet\n• Small Footprint (5 x 6 mm) for Compact Design\n• ROHS compliant\n• Low RDS(on) to Minimize Conduction Losses\;

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MOSFET, N-Channel, Shielded Gate, POWERTRENCH

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MOSFET - Power, Single N-Channel 100 V, 10.6 m, 57.8 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFWS010N10MCLTAG − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：332.08 Kbytes 页数：7 Pages

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MOSFET - Power, Single N-Channel 100 V, 10.6 m, 57.8 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFWS010N10MCLTAG − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：332.08 Kbytes 页数：7 Pages

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安森美半导体