单 P 沟道沟槽功率 MOSFET，带 ESD 保护 -20V -8.2A 18mΩ

Power MOSFET \n−20 V, −8.2 A, Single P−Channel, \n2.0x2.0x0.55 mm UDFN Package • UDFN Package with Exposed Drain Pads \n• Excellent Thermal Conduction\n• Low Profile UDFN 2.0x2.0x0.55 mm \n• Board Space Saving\n• Ultra Low RDS(on)\n• Improve System Efficiency\n• ESD DiodeProtected Gate\n• RoHS Compliant;

ONSEMI

安森美半导体