MOSFET - Power, Single N-Channel, WDFN6 30 V, 4.38 m, 18.8 A

文件：331.29 Kbytes 页数：6 Pages

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MOSFET - Power, Single N-Channel, WDFN6 30 V, 4.38 m, 18.8 A

文件：331.29 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

MOSFET，功率，30V，N 沟道，WDFN6

MOSFET, Power, Single 30V N-Channel, 7.25mΩ @ 4.5V, 18.8A, WDFN6 2x2x0.8mm • Ultra Low RDS(on)\n• Minimize Conduction Losses and Improve System Efficiency\n• Small Footprint of 4mm²\n• Ideal for Space-Constraint Designs\n• Pb−Free, Halogen−Free/BFR−Free\n• RoHS Compliant;

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安森美半导体

MOSFET - Power, Single N-Channel 30 V, 4.2 m, 77 A

Features • Small Footprint for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：169.64 Kbytes 页数：7 Pages

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安森美半导体

MOSFET - Power, Single N-Channel 30 V, 4.2 m, 77 A

Features • Small Footprint for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：169.64 Kbytes 页数：7 Pages

ONSEMI

安森美半导体