NTJD1155L中文资料双 P 沟道，高压侧负载开关，带电平移位，功率 MOSFET，-8V，±1.3A，175mΩ数据手册ONSEMI规格书

描述 Description

The NTJD1155L integrates a P and N-Channel MOSFET in a single package.This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed.The P-Channel device is specifically designed as a load switch using ON Semiconductor state-of-the-art trench technology.The N-Channel, with an external resistor (R1), functions as a level-shift to drive the P-Channel.The N-Channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V.The NTJD1155L operates on supply lines from 1.8 to 8.0 V and can drive loads up to 1.3 A with 8.0 V applied to both VIN and VON/OFF.

特性 Features

• Extremely Low RDS(on) P-Channel Load Switch MOSFET
• Level Shift MOSFET is ESD Protected
• Low Profile, Small Footprint Package
• VIN Range 1.8 to 8.0 V
• ON/OFF Range 1.5 to 8.0 V

应用 Application

• Integrated High Side Load Switch with built in Level Shift
• Portable Equipment
• Cell Phones
• Digital Cameras
• PDAs
• Media Players