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NVBG080N120SC1

SiliconCarbide(SiC)MOSFET–80mohm,1200V,M1,D2PAK-7L

Features •Typ.RDS(on)=80m •UltraLowGateCharge(Typ.QG(tot)=56nC) •LowEffectiveOutputCapacitance(Typ.Coss=79pF) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevel

ONSEMION Semiconductor

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NVBG080N120SC1

MOSFET??SiCPower,SingleN-Channel,D2PAK-7L

ONSEMION Semiconductor

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NVC080N120SC1

MOSFET??N?륝hannel,SiliconCarbide1200V,80m

Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl

ONSEMION Semiconductor

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NVHL080N120SC1

SiliconCarbide(SiC)MOSFET–80mohm,1200V,M1,TO-247-3L

Features •Typ.RDS(on)=80m •UltraLowGateCharge(typ.QG(tot)=56nC) •LowEffectiveOutputCapacitance(typ.Coss=80pF) •100UILTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterc

ONSEMION Semiconductor

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NVHL080N120SC1

MOSFET-SiCPower,SingleN-Channel

ONSEMION Semiconductor

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NVHL080N120SC1A

MOSFET-SiCPower,SingleN-Channel

ONSEMION Semiconductor

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