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NTHL040N120M3S

Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200V, M3S, TO-247-3L

Features • Typ. RDS(on) = 40 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 75 nC) • High Speed Switching with Low Capacitance (Coss = 80 pF) • 100 Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical

文件:228.49 Kbytes 页数:8 Pages

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NTHL040N120M3S

Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M3S, TO-247-3L

The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive. • Excellent FOM [ = Rdson * Eoss ]\n• Ultra Low Gate Charge (QG(tot) = 75 nC)\n• High Speed Switching with Low Capacitance (Coss = 80 pF)\n• 15V to 18V Gate Drive\n• New M3S technology: 40 mohm RDS(ON) with low Eon and Eoff losses\n• 100% Avalanche Tested\n• Halide Free and RoHS Compliant;

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NVBG040N120M3S

Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M3S, D2PAK-7L

Features • Typ. RDS(on) = 40 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 75 nC) • High Speed Switching with Low Capacitance (Coss = 80 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on s

文件:231.41 Kbytes 页数:8 Pages

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NTBG040N120M3S

Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M3S, D2PAK-7L

Features • Typ. RDS(on) = 40 m @ VGS = 18 V • Ultra Low Gate Charge (QG(TOT) = 75 nC) • High Speed Switching with Low Capacitance (COSS = 80 pF) • 100 Avalanche Tested • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free 2LI (on Second Level Interconnection) Typical A

文件:335.85 Kbytes 页数:8 Pages

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NTCR040N120M3S

Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M3S, Die

Features • Typ. RDS(on) = 40 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 75 nC) • High Speed Switching with Low Capacitance (Coss = 80 pF) Applications • Solar Inverters • Electric Vehicle Charging Stations • Uninterruptible Power Supplies (UPS) • Energy Storage Systems • Switch

文件:254.99 Kbytes 页数:8 Pages

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供应商型号品牌批号封装库存备注价格
onsemi
23+
TO-247-3L
1356
原厂正品现货SiC MOSFET全系列
询价
24+
N/A
70000
一级代理-主营优势-实惠价格-不悔选择
询价
ON
24+
N/A
5002
原装原装原装
询价
ONN
2324+
250000
原装正品,超低价出售
询价
onsemi
2025+
TO-247-3
55740
询价
鑫远鹏
25+
NA
5000
价优秒回原装现货
询价
ON/安森美
22+
24000
原装正品现货,实单可谈,量大价优
询价
onsemi(安森美)
24+
TO247
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
ONSEMI
23+
MOSFET
5864
原装原标原盒 给价就出 全网最低
询价
ON(安森美)
23+
11755
公司只做原装正品,假一赔十
询价
更多NTHL040N120M3S供应商 更新时间2025-10-4 13:27:00