NTHL040N120M3S

Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200V, M3S, TO-247-3L

Features •Typ.RDS(on)=40m@VGS=18V •UltraLowGateCharge(QG(tot)=75nC) •HighSpeedSwitchingwithLowCapacitance(Coss=80pF) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typical

NTHL040N120M3S

Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M3S, TO-247-3L; • Excellent FOM [ = Rdson * Eoss ]\n• Ultra Low Gate Charge (QG(tot) = 75 nC)\n• High Speed Switching with Low Capacitance (Coss = 80 pF)\n• 15V to 18V Gate Drive\n• New M3S technology: 40 mohm RDS(ON) with low Eon and Eoff losses\n• 100% Avalanche Tested\n• Halide Free and RoHS Compliant\n;

The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.

NTBG040N120M3S

SiliconCarbide(SiC)MOSFET–EliteSiC,40mohm,1200V,M3S,D2PAK-7L

Features •Typ.RDS(on)=40m@VGS=18V •UltraLowGateCharge(QG(TOT)=75nC) •HighSpeedSwitchingwithLowCapacitance(COSS=80pF) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithExemption7a, Pb−Free2LI(onSecondLevelInterconnection) TypicalA

NVBG040N120M3S

SiliconCarbide(SiC)MOSFET–EliteSiC,40mohm,1200V,M3S,D2PAK-7L

Features •Typ.RDS(on)=40m@VGS=18V •UltraLowGateCharge(QG(tot)=75nC) •HighSpeedSwitchingwithLowCapacitance(Coss=80pF) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(ons

NTHL040N65S3F

ON/安森美
TO-247

ON/安森美